IRF7665S2TR1PBF
MOSFET N-CH 100V 4.1A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IRF7665S2TR1PBF is an N-Channel MOSFET designed for demanding power applications. This component features a 100V drain-to-source voltage (Vdss) and supports a continuous drain current of 4.1A at ambient temperature and 14.4A at case temperature. The device offers a low on-resistance of 62mOhm maximum at 8.9A and 10V gate-source voltage (Vgs). With a gate charge (Qg) of 13 nC maximum at 10V Vgs and input capacitance (Ciss) of 515 pF maximum at 25V Vds, it is suitable for efficient switching. The advanced DirectFET™ Isometric SB package enables high power dissipation, rated at 2.4W (Ta) and 30W (Tc), and supports a wide operating temperature range from -55°C to 175°C. This MOSFET is commonly utilized in power management, automotive systems, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta), 14.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 8.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 25µA |
| Supplier Device Package | DIRECTFET SB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 515 pF @ 25 V |
Request a Quote
Clients Also Buy
IRL3705ZLPBF
MOSFET N-CH 55V 75A TO262
IRF3805STRLPBF
MOSFET N-CH 55V 75A D2PAK
IPB073N15N5ATMA1
MOSFET N-CH 150V 114A TO263-3
