IRF7663TRPBF
MOSFET P-CH 20V 8.2A MICRO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7663TRPBF, is a surface mount device in a Micro8™ package. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous drain current (Id) of 8.2 A at 25°C. The Rds On is specified at a maximum of 20 mOhm when driven with 4.5 V and at 7 A. Gate charge (Qg) is rated at 45 nC maximum at 5 V, and input capacitance (Ciss) is 2520 pF maximum at 10 V. It operates within an extended temperature range of -55°C to 150°C. This MOSFET is suitable for applications in automotive and industrial sectors requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Micro8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2520 pF @ 10 V |
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