IRF7663
MOSFET P-CH 20V 8.2A MICRO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies P-Channel HEXFET® MOSFET, part number IRF7663, offers a 20V drain-to-source voltage and a continuous drain current of 8.2A at 25°C. This surface mount device, packaged in a Micro8™ (8-TSSOP, 8-MSOP) with 2.5V/4.5V drive voltages, features a maximum Rds(on) of 20mOhm at 7A and 4.5V. Key characteristics include a gate charge of 45nC at 5V and input capacitance of 2520pF at 10V. With a maximum power dissipation of 1.8W (Ta), this MOSFET is suitable for applications in automotive and industrial sectors requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Micro8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2520 pF @ 10 V |
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