IRF7607
MOSFET N-CH 20V 6.5A MICRO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® IRF7607 is a surface-mount N-channel Power MOSFET designed for efficient switching applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 6.5A at 25°C, with a maximum power dissipation of 1.8W (Ta). The IRF7607 boasts a low on-resistance (Rds On) of 30mOhm at 6.5A and 4.5V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 22 nC maximum at 5V and an input capacitance (Ciss) of 1310 pF maximum at 15V. It operates across a temperature range of -55°C to 150°C (TJ) and is housed in an 8-TSSOP, 8-MSOP (Micro8™) package, suitable for high-density board designs. This MOSFET is commonly utilized in automotive, industrial automation, and consumer electronics power management solutions.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Micro8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1310 pF @ 15 V |
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