IRF7606TR
MOSFET P-CH 30V 3.6A MICRO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7606TR, offers a 30V drain-source voltage and a continuous drain current of 3.6A at 25°C. This surface mount component, housed in an 8-TSSOP/8-MSOP Micro8™ package, features a maximum power dissipation of 1.8W with a thermal resistance of 90mOhm at 2.4A and 10V Vgs. Key electrical characteristics include a gate charge (Qg) of 30 nC at 10V and input capacitance (Ciss) of 520 pF at 25V. The device supports a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 1V at 250µA. Suitable for applications in automotive and industrial sectors, this MOSFET utilizes Metal Oxide technology. The component is supplied on tape and reel.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | Micro8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 25 V |
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