IRF7604TRPBF
MOSFET P-CH 20V 3.6A MICRO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7604TRPBF, offers a 20V drain-source voltage rating and continuous drain current capability of 3.6A at 25°C ambient. This surface mount device, housed in an 8-TSSOP/8-MSOP Micro8™ package, features a maximum Rds(on) of 90mOhm at 2.4A and 4.5V Vgs. Key parameters include a 20 nC gate charge at 4.5V Vgs and 590 pF input capacitance at 15V Vds. The device operates across a temperature range of -55°C to 150°C. Its typical applications include power management and switching circuits within the automotive and industrial equipment sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | Micro8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 15 V |