IRF7604TR
MOSFET P-CH 20V 3.6A MICRO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRF7604TR is a P-Channel MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 3.6 A at 25°C (Ta). With a low on-resistance (Rds On) of 90 mOhm maximum at 2.4 A and 4.5 V gate-source voltage, it minimizes conduction losses. The MOSFET exhibits a gate charge (Qg) of 20 nC maximum at 4.5 V and input capacitance (Ciss) of 590 pF maximum at 15 V. It is supplied in a Micro8™ package, specifically an 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), suitable for surface mounting and delivered in cut tape packaging. The threshold voltage (Vgs(th)) is 700 mV maximum at 250 µA. This component finds application in power management and switching circuits across various industries.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.4A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | Micro8™ |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 15 V |
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