IRF7603TRPBF
MOSFET N-CH 30V 5.6A MICRO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' HEXFET® IRF7603TRPBF is an N-channel power MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage and a continuous drain current rating of 5.6A at 25°C ambient. With a low on-resistance of 35mOhm maximum at 3.7A and 10V Vgs, it minimizes conduction losses. The device offers a gate charge of 27nC maximum at 10V Vgs and an input capacitance of 520pF maximum at 25V Vds. Operating over a temperature range of -55°C to 150°C, it is suitable for power management, automotive, and industrial control systems. Packaged in a Micro8™ (8-TSSOP, 8-MSOP) for surface mounting, it is supplied on tape and reel.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | Micro8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 25 V |
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