IRF7603TR
MOSFET N-CH 30V 5.6A MICRO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IRF7603TR is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 5.6A at 25°C ambient temperature. The IRF7603TR exhibits a low on-resistance of 35mOhm at 3.7A and 10V Vgs, minimizing conduction losses. With a gate charge of 27nC (max) at 10V and an input capacitance of 520pF (max) at 25V, it offers efficient switching characteristics. The MOSFET is housed in an 8-pin Micro8™ package (8-TSSOP, 8-MSOP) for surface mounting, suitable for compact designs in automotive and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 3.7A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | Micro8™ |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 25 V |
Request a Quote
Clients Also Buy
BSZ021N04LS6ATMA1
MOSFET N-CH 40V 25A/40A TSDSON
SPA11N65C3XKSA1
MOSFET N-CH 650V 11A TO220-FP
IPP082N10NF2SAKMA1
TRENCH >=100V
