IRF7601TR
MOSFET N-CH 20V 5.7A MICRO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRF7601TR is an N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous drain current (Id) capability of 5.7 A at 25°C. With a low Rds(On) of 35 mOhm at 3.8 A and 4.5 V, it minimizes conduction losses. The device exhibits a gate charge (Qg) of 22 nC maximum at 4.5 V and an input capacitance (Ciss) of 650 pF maximum at 15 V. It is supplied in a Micro8™ (8-TSSOP, 8-MSOP) surface mount package and is available on cut tape. This MOSFET is suitable for use in power management, automotive, and industrial control sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 3.8A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | Micro8™ |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 15 V |
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