IRF7534D1TR
MOSFET P-CH 20V 4.3A MICRO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies P-Channel MOSFET, part number IRF7534D1TR, is a high-performance component from the FETKY™ series. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current capability of 4.3A at 25°C, with a maximum power dissipation of 1.25W. The Rds(On) is rated at 55mOhm at 4.3A and 4.5V gate-source voltage. Integrated within its Micro8™ package, it includes an isolated Schottky diode, enhancing its switching characteristics. The MOSFET operates efficiently with drive voltages between 2.5V and 4.5V, and a maximum gate-source voltage of ±12V. Key parameters include a gate charge (Qg) of 15 nC and input capacitance (Ciss) of 1066 pF. This component is suitable for surface mount applications and operates within a temperature range of -55°C to 150°C. It finds application in various industries including automotive and industrial power management.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 4.3A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Micro8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1066 pF @ 10 V |
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