IRF7534D1PBF
MOSFET P-CH 20V 4.3A MICRO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies P-Channel MOSFET, IRF7534D1PBF, is a surface mount device from the FETKY™ series. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 4.3A at 25°C. The Rds On is specified at a maximum of 55mOhm at 4.3A and 4.5V Vgs. Key characteristics include a Gate Charge (Qg) of 15 nC maximum at 5V Vgs and Input Capacitance (Ciss) of 1066 pF maximum at 10V Vds. The device includes an isolated Schottky diode and operates from -55°C to 150°C. Package options include 8-TSSOP and 8-MSOP. This MOSFET is suitable for applications in automotive and industrial sectors.
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 4.3A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Micro8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1066 pF @ 10 V |
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