IRF7534D1
MOSFET P-CH 20V 4.3A MICRO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies FETKY™ P-Channel MOSFET, part number IRF7534D1, offers a 20V drain-source voltage capability and 4.3A continuous drain current at 25°C ambient. This device features a low Rds(on) of 55mOhm at 4.3A and 4.5V Vgs, and a gate charge of 15 nC maximum at 5V Vgs. The input capacitance (Ciss) is 1066 pF maximum at 10V Vds. The integrated Schottky diode provides enhanced performance characteristics. Designed for surface mounting in the Micro8™ (8-TSSOP, 8-MSOP) package, it operates within a temperature range of -55°C to 150°C. The maximum power dissipation is 1.25W. This component is utilized in various applications including power management, battery protection, and general-purpose switching.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 4.3A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Micro8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1066 pF @ 10 V |
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