IRF7526D1TR
MOSFET P-CH 30V 2A MICRO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies FETKY™ P-Channel MOSFET, IRF7526D1TR, offers robust performance with a 30V Drain-Source Voltage (Vdss) and a continuous drain current of 2A at 25°C. This component features an integrated Schottky diode, providing enhanced protection and switching characteristics. Designed for surface mounting, it is housed in an 8-pin Micro8™ package (8-TSSOP, 8-MSOP). Key parameters include a maximum Rds On of 200mOhm at 1.2A and 10V Vgs, a gate charge (Qg) of 11 nC at 10V, and input capacitance (Ciss) of 180 pF at 25V. The device operates across a wide temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±20V. This MOSFET is suitable for applications in automotive, industrial, and consumer electronics requiring efficient power switching.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.2A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | Micro8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |
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