IRF7526D1PBF
MOSFET P-CH 30V 2A MICRO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies P-Channel MOSFET, part number IRF7526D1PBF, is a FETKY™ series device designed for efficient power management. This surface mount component features a 30V drain-source breakdown voltage and a continuous drain current capability of 2A at 25°C. The integrated Schottky diode provides enhanced performance characteristics. With a maximum Rds(on) of 200mOhm at 1.2A and 10V Vgs, it offers low conduction losses. Key parameters include a gate charge of 11nC and input capacitance of 180pF. The Micro8™ package, also known as 8-TSSOP or 8-MSOP, facilitates compact board designs. This MOSFET is suitable for applications in consumer electronics, industrial control, and automotive systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.2A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | Micro8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |