IRF7524D1TR
MOSFET P-CH 20V 1.7A MICRO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the FETKY™ series P-Channel MOSFET, part number IRF7524D1TR. This surface mount device, housed in a Micro8™ package (8-TSSOP/8-MSOP), offers a 20V drain-source voltage and a continuous drain current capability of 1.7A at 25°C. Key characteristics include a maximum Rds(on) of 270mOhm at 1.2A and 4.5V Vgs, with a gate charge of 8.2nC at 4.5V. The component integrates a Schottky diode and supports gate drive voltages from 2.7V to 4.5V. Its low input capacitance of 240pF at 15V Vds and a maximum power dissipation of 1.25W at 25°C make it suitable for applications in consumer electronics and industrial automation. The operating junction temperature range is -55°C to 150°C.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 1.2A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | Micro8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 15 V |
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