IRF7524D1GTRPBF
MOSFET P-CH 20V 1.7A 8USMDManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies P-Channel MOSFET, part number IRF7524D1GTRPBF, from the FETKY™ series, is a 20 V device designed for efficient power switching applications. This surface-mount component features a low Rds On of 270mOhm at 1.2A and 4.5V Vgs, with a continuous drain current of 1.7A (Ta) and a maximum power dissipation of 1.25W (Ta). Its integrated Schottky diode provides enhanced performance. The 8-uSMD package ensures a compact footprint. Applications include power management, battery protection, and general-purpose switching in consumer electronics and industrial control systems. Key electrical parameters include a gate charge of 8.2 nC at 4.5 V and input capacitance of 240 pF at 15 V.
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 1.2A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | 8-uSMD |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 15 V |