IRF7523D1TRPBF
MOSFET N-CH 30V 2.7A MICRO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IRF7523D1TRPBF, an N-Channel MOSFET from the FETKY™ series. This component features a 30V drain-source voltage and a continuous drain current of 2.7A at 25°C, with a maximum power dissipation of 1.25W. The device offers low on-resistance of 130mOhm at 1.7A and 10V, complemented by an integrated Schottky diode. Designed for surface mounting in an 8-TSSOP, 8-MSOP (Micro8™) package, it operates across a temperature range of -55°C to 150°C. Key parameters include a gate charge of 12nC and input capacitance of 210pF. This MOSFET is suitable for applications in automotive and industrial sectors.
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 1.7A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | Micro8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 25 V |