IRF7523D1
MOSFET N-CH 30V 2.7A MICRO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies FETKY™ series IRF7523D1 is an N-Channel MOSFET designed for efficient power switching applications. This component features a 30V drain-source voltage and a continuous drain current capability of 2.7A at 25°C, with a maximum power dissipation of 1.25W. The device offers a low on-resistance of 130mOhm at 1.7A and 10V Vgs, facilitated by a 4.5V to 10V drive voltage range. Integrated within its Micro8™ package is a Schottky diode, providing an isolated solution. Key parameters include a maximum gate charge of 12nC and input capacitance of 210pF. The IRF7523D1 is suitable for use in automotive, industrial, and consumer electronics sectors requiring robust power management. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 1.7A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | Micro8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 25 V |