IRF7521D1
MOSFET N-CH 20V 2.4A MICRO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies FETKY™ series N-Channel MOSFET, part number IRF7521D1, is a 20 V device designed for surface mount applications in an 8-TSSOP, 8-MSOP (Micro8™) package. This MOSFET features a continuous drain current of 2.4A (Ta) and a maximum power dissipation of 1.3W (Ta). The IRF7521D1 exhibits a low on-resistance of 135mOhm at 1.7A and 4.5V, with a Vgs(th) of 700mV (Min) at 250µA. Key specifications include a gate charge of 8 nC at 4.5V and an input capacitance of 260 pF at 15V. The integrated Schottky diode offers isolation. This component is suitable for use in automotive and industrial applications requiring efficient power switching.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 1.7A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | Micro8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 15 V |