IRF7495TR
MOSFET N-CH 100V 7.3A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7495TR is an N-Channel power MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain current (Id) of 7.3A at 25°C, with a maximum power dissipation of 2.5W (Ta). The IRF7495TR exhibits a low on-resistance (Rds On) of 22mOhm at 4.4A and 10V Vgs, and a gate charge (Qg) of 51 nC maximum at 10V Vgs. It is packaged in an 8-SOIC (0.154", 3.90mm Width) and mounts via surface mount technology. Operating temperature range is -55°C to 150°C (TJ). Key specifications include an input capacitance (Ciss) of 1530 pF maximum at 25V Vds and a gate-source threshold voltage (Vgs(th)) of 4V at 250µA. This component is utilized in various industrial sectors including automotive, consumer electronics, and telecommunications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 4.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1530 pF @ 25 V |
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