IRF7494TRPBF
MOSFET N-CH 150V 5.1A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7494TRPBF is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 5.1 A at 25°C, with a maximum power dissipation of 2.5 W. The Rds On (Max) is specified at 44 mOhm at 3.1 A and 10 V gate drive. Key electrical characteristics include a gate charge (Qg) of 53 nC at 10 V and an input capacitance (Ciss) of 1783 pF at 25 V. The device is housed in an 8-SOIC package and is supplied on tape and reel for automated assembly. It is suitable for use in power supply, motor control, and industrial automation applications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1783 pF @ 25 V |