IRF7493TR
MOSFET N-CH 80V 9.3A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7493TR. This surface mount device features a 80V drain-source breakdown voltage and a continuous drain current rating of 9.3A at 25°C (Tc). The IRF7493TR offers a low on-resistance of 15mOhm maximum at 5.6A and 10V gate-source voltage. Key parameters include a gate charge of 53nC (max) at 10V and an input capacitance of 1510pF (max) at 25V. With a maximum power dissipation of 2.5W (Tc), it operates across a wide temperature range of -55°C to 150°C (TJ). The device is supplied in an 8-SOIC package on tape and reel. Applications include power management, motor control, and switching power supplies in automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1510 pF @ 25 V |
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