IRF7493PBF
MOSFET N-CH 80V 9.3A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® Series N-Channel Power MOSFET, part number IRF7493PBF. This component features a Drain-Source Voltage (Vdss) of 80V and a continuous Drain Current (Id) of 9.3A at 25°C. The Rds On is specified at a maximum of 15mOhm at 5.6A and 10V gate drive. It offers a low gate charge of 53 nC maximum at 10V and an input capacitance (Ciss) of 1510 pF maximum at 25V. The device is constructed with MOSFET technology and is supplied in an 8-SOIC surface mount package. Maximum power dissipation is rated at 2.5W. Operating temperature range is -55°C to 150°C. This component is commonly utilized in power supply applications and general-purpose switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1510 pF @ 25 V |
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