IRF7492PBF
MOSFET N-CH 200V 3.7A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7492PBF is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain current (Id) of 3.7 A at 25°C. The device exhibits a low on-resistance (Rds On) of 79 mOhm at 2.2 A and 10 V gate drive. With a maximum power dissipation of 2.5 W (Ta) and a gate charge (Qg) of 59 nC at 10 V, it is suitable for various power management tasks. The IRF7492PBF utilizes advanced MOSFET technology, offering a gate-source voltage range of ±20 V and a threshold voltage (Vgs(th)) of 2.5 V at 250 µA. This surface-mount component is supplied in an 8-SOIC package and operates across a wide temperature range from -55°C to 150°C. It finds application in power supplies, industrial automation, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 79mOhm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 25 V |
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