IRF7492
MOSFET N-CH 200V 3.7A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7492 is an N-Channel power MOSFET designed for efficient switching applications. This component offers a 200 V drain-source voltage rating and a continuous drain current capability of 3.7 A at 25°C ambient. The device features a maximum on-resistance of 79 mOhm at 2.2 A and 10 V gate-source voltage. With a gate charge of 59 nC at 10 V, it exhibits low switching losses. The input capacitance (Ciss) is a maximum of 1820 pF at 25 V. The IRF7492 is packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, with a maximum power dissipation of 2.5 W in a typical application. It operates across a temperature range of -55°C to 150°C. This MOSFET is frequently utilized in power supply units, motor control, and general-purpose power switching applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 79mOhm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 25 V |