IRF7490PBF
MOSFET N-CH 100V 5.4A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7490PBF is an N-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 5.4 A at 25°C. The On-Resistance (Rds On) is a maximum of 39 mOhm at 3.2 A and 10 V gate drive. With a gate charge (Qg) of 56 nC at 10 V and input capacitance (Ciss) of 1720 pF at 25 V, it offers optimized performance for various power management tasks. The device is packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting and can operate within a temperature range of -55°C to 150°C. The maximum power dissipation is 2.5 W. This MOSFET is commonly utilized in industrial, automotive, and consumer electronics, particularly in power supply units and motor control circuits.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1720 pF @ 25 V |
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