IRF7488TRPBF
MOSFET N-CH 80V 6.3A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7488TRPBF is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 80V and a continuous Drain current (Id) of 6.3A at 25°C, with a maximum power dissipation of 2.5W (Ta). The device exhibits a low On-Resistance (Rds On) of 29mOhm at 3.8A and 10V Vgs, facilitated by a 10V gate drive. Key capacitances include an input capacitance (Ciss) of 1680pF at 25V and a gate charge (Qg) of 57nC at 10V. Operating across a temperature range of -55°C to 150°C (TJ), the IRF7488TRPBF is housed in an 8-SOIC package suitable for surface mounting. Its specifications make it suitable for use in automotive, industrial, and consumer electronics power management circuits.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 25 V |