IRF7488PBF
MOSFET N-CH 80V 6.3A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7488PBF. This 80V device features a continuous drain current of 6.3A (Ta) and a maximum power dissipation of 2.5W (Ta). Specified with a low on-resistance of 29mOhm at 3.8A and 10V Vgs, it is designed for efficient switching applications. The device has a gate charge of 57nC (Max) at 10V and an input capacitance of 1680pF (Max) at 25V. Mounting is via surface mount with an 8-SOIC package. This component is utilized in industrial and automotive power management solutions.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 25 V |