IRF7484Q
MOSFET N-CH 40V 14A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7484Q is an N-Channel Power MOSFET designed for demanding applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 14A at 25°C, with a maximum power dissipation of 2.5W. The low on-resistance of 10mOhm at 14A and 7V drive voltage, coupled with a gate charge (Qg) of 100 nC at 7V, ensures efficient switching performance. The IRF7484Q utilizes advanced MOSFET technology and is packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting. It operates across a wide temperature range of -55°C to 150°C. This MOSFET is suitable for use in automotive, industrial, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 14A, 7V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 7V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 7 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3520 pF @ 25 V |