IRF7478PBF
MOSFET N-CH 60V 7A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7478PBF is a 60V N-Channel power MOSFET designed for efficient switching applications. This surface-mount device, packaged in an 8-SOIC, offers a continuous drain current of 7A (Ta) with a maximum on-resistance of 26mOhm at 4.2A and 10V Vgs. Key parameters include a gate charge of 31 nC at 4.5V and input capacitance of 1740 pF at 25V. Operating over a temperature range of -55°C to 150°C, it dissipates up to 2.5W (Ta). This component is suitable for use in power management, industrial automation, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 4.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1740 pF @ 25 V |