IRF7477
MOSFET N-CH 30V 14A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7477 is an N-Channel Power MOSFET designed for efficient switching applications. This component features a drain-to-source voltage (Vdss) of 30 V and supports a continuous drain current (Id) of 14 A at 25°C. The device exhibits a low on-resistance (Rds On) of 8.5 mOhm maximum at 14 A and 10 V gate-source voltage, coupled with a gate charge (Qg) of 38 nC maximum at 4.5 V. Its input capacitance (Ciss) is rated at 2710 pF maximum at 15 V. The IRF7477 is available in an 8-SOIC package for surface mounting, with a maximum power dissipation of 2.5 W. The operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in power management, automotive, and industrial applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2710 pF @ 15 V |
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