IRF7475TRPBF
MOSFET N-CH 12V 11A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7475TRPBF, is a surface-mount device designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 12V and a continuous Drain Current (Id) capability of 11A at 25°C. With a low on-resistance of 15mOhm at 8.8A and 4.5V Vgs, it offers efficient power handling. The device boasts a maximum power dissipation of 2.5W (Ta) and a junction temperature range of -55°C to 150°C. Key parameters include a gate charge (Qg) of 19 nC at 4.5V and input capacitance (Ciss) of 1590 pF at 6V. The 8-SOIC package is supplied on tape and reel. This MOSFET is suitable for applications in automotive, industrial, and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 8.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1590 pF @ 6 V |