IRF7473TRPBF
MOSFET N-CH 100V 6.9A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7473TRPBF is a N-Channel power MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 6.9A at 25°C, with a maximum power dissipation of 2.5W (Ta). The low on-resistance of 26mOhm at 4.1A and 10V gate drive voltage ensures minimal conduction losses. Key electrical parameters include a gate charge (Qg) of 61 nC and input capacitance (Ciss) of 3180 pF at 25V. The device is housed in an 8-SOIC package, facilitating surface mounting. It operates reliably across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in various industrial sectors including automotive and telecommunications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 4.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3180 pF @ 25 V |
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