IRF7471PBF
MOSFET N-CH 40V 10A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7471PBF, features a 40V drain-source voltage and 10A continuous drain current at 25°C ambient. This surface mount device, housed in an 8-SOIC package, offers a low on-resistance of 13mOhm maximum at 10A and 10V Vgs. The IRF7471PBF has a gate charge of 32nC at 4.5V and input capacitance of 2820pF at 20V. It operates across a temperature range of -55°C to 150°C. This component is suitable for applications in power management, general-purpose switching, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2820 pF @ 20 V |
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