IRF7470PBF
MOSFET N-CH 40V 10A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7470PBF. This surface-mount device features a 40V drain-source voltage and a continuous drain current of 10A at 25°C. Key electrical characteristics include a maximum Rds(on) of 13mOhm at 10A and 10V, a gate charge (Qg) of 44nC at 4.5V, and an input capacitance (Ciss) of 3430pF at 20V. The device is designed for efficient switching applications, with a maximum power dissipation of 2.5W. It operates within a temperature range of -55°C to 150°C. The 8-SOIC package is suitable for various industrial and automotive power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3430 pF @ 20 V |
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