IRF7469
MOSFET N-CH 40V 9A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET N-Channel MOSFET, part number IRF7469, is a 40V device designed for surface-mount applications. This component features a continuous drain current capability of 9A at 25°C with a maximum power dissipation of 2.5W. The IRF7469 exhibits a low on-resistance of 17mOhm at 9A and 10V Vgs, with a gate charge of 23 nC at 4.5V Vgs. It operates across a temperature range of -55°C to 150°C and is housed in an 8-SOIC package. Drive voltages range from 4.5V to 10V, with a maximum gate-source voltage of ±20V. Key parameters include a Vgs(th) of 3V at 250µA and input capacitance of 2000 pF at 20V Vds. This MOSFET is utilized in industries such as industrial automation and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 20 V |
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