IRF7468TR
MOSFET N-CH 40V 9.4A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7468TR is an N-Channel Power MOSFET designed for efficient switching applications. This component features a 40V Drain-Source Voltage (Vdss) and a Continuous Drain Current (Id) of 9.4A at 25°C ambient. The Rds(On) is specified as a maximum of 15.5mOhm at 9.4A and 10V Vgs, indicating low conduction losses. It offers a nominal Gate Charge (Qg) of 34 nC at 4.5V Vgs and an Input Capacitance (Ciss) of 2460 pF at 20V Vds. Power dissipation is rated at 2.5W (Ta). The device is supplied in an 8-SOIC package for surface mounting, with tape and reel packaging. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in various industrial and consumer electronics power management circuits.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 9.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2460 pF @ 20 V |
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