IRF7468
MOSFET N-CH 40V 9.4A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7468, is designed for demanding applications with its 40V drain-source voltage and 9.4A continuous drain current at 25°C. This surface-mount device, housed in an 8-SOIC package, features a low Rds(on) of 15.5mOhm at 9.4A and 10V Vgs, ensuring efficient power transfer. The gate charge (Qg) is a maximum of 34nC at 4.5V Vgs, and input capacitance (Ciss) is 2460pF at 20V Vds. With a maximum power dissipation of 2.5W (Ta) and an operating temperature range of -55°C to 150°C, the IRF7468 is suitable for use in power management, automotive, and industrial control systems. The device supports gate drive voltages from 4.5V to 10V and has a maximum Vgs of ±12V.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 9.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2460 pF @ 20 V |