IRF7466TRPBF
MOSFET N-CH 30V 11A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7466TRPBF is a 30V N-Channel power MOSFET designed for efficient switching applications. This component features a low Rds(on) of 12.5mOhm at 11A and 10V Vgs, enabling minimal conduction losses. With a continuous drain current capability of 11A (Ta) and a maximum power dissipation of 2.5W (Ta), it is suitable for demanding thermal environments. The device offers a gate charge of 23 nC at 4.5V Vgs and input capacitance of 2100 pF at 15V Vds, facilitating fast switching speeds. Packaged in an 8-SOIC (0.154", 3.90mm Width) in Tape & Reel, it operates across a temperature range of -55°C to 150°C. Applications include power management, automotive systems, and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 15 V |
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