IRF7466
MOSFET N-CH 30V 11A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7466 is a 30V N-Channel power MOSFET in an 8-SOIC package. This surface mount device offers a continuous drain current of 11A (Ta) with a maximum on-resistance of 12.5mOhm at 11A and 10V. Key parameters include a gate charge of 23 nC @ 4.5V and an input capacitance of 2100 pF @ 15V. The device operates across a temperature range of -55°C to 150°C and supports gate-source voltages up to ±20V. With a power dissipation capability of 2.5W (Ta), the IRF7466 is suitable for applications in automotive, industrial, and consumer electronics requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 15 V |