IRF7465
MOSFET N-CH 150V 1.9A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7465, is designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 1.9A at 25°C. The Rds On is specified at a maximum of 280mOhm when driven at 10V with a current of 1.14A. With a gate charge (Qg) of 15 nC at 10V and input capacitance (Ciss) of 330 pF at 25V, it is suitable for various switching applications. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2.5W (Ta). The IRF7465 is supplied in an 8-SOIC package, facilitating surface mounting. This component finds utility in power supply control, motor drive, and general-purpose switching circuits.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 1.14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |