IRF7464TRPBF
MOSFET N-CH 200V 1.2A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7464TRPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 200V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 1.2A at 25°C ambient. The on-resistance (Rds On) is specified at a maximum of 730mOhm at 720mA and 10V gate-source voltage. With a maximum power dissipation of 2.5W (Ta) and a junction temperature range of -55°C to 150°C, it offers robust thermal performance. The device is supplied in an 8-SOIC package with tape and reel packaging. Key parameters include a gate charge (Qg) of 14 nC (max) at 10V and input capacitance (Ciss) of 280 pF (max) at 25V. This MOSFET is suitable for use in industrial automation, power supply units, and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 730mOhm @ 720mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |
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