IRF7464PBF
MOSFET N-CH 200V 1.2A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7464PBF. This device features a 200V drain-to-source voltage (Vdss) and a continuous drain current of 1.2A at 25°C. With a maximum on-resistance (Rds(on)) of 730mOhm at 720mA and 10V Vgs, it offers efficient switching. The MOSFET is packaged in an 8-SOIC surface mount configuration, allowing for compact board layouts. Key parameters include a gate charge (Qg) of 14 nC at 10V and input capacitance (Ciss) of 280 pF at 25V. Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in power management, industrial automation, and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 730mOhm @ 720mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |
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