IRF7464
MOSFET N-CH 200V 1.2A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7464. This surface mount device is designed for applications requiring 200V drain-source voltage and 1.2A continuous drain current at 25°C. Key parameters include a maximum Rds(on) of 730mOhm at 720mA and 10V Vgs, with a typical gate charge of 14 nC at 10V. Input capacitance (Ciss) is specified at 280 pF maximum at 25V. The device features a 10V drive voltage and a gate-source voltage tolerance of ±30V. With a maximum power dissipation of 2.5W (Ta), it is suitable for operation across a wide temperature range of -55°C to 150°C (TJ). The 8-SOIC package is supplied in a tube for automated assembly. This MOSFET is commonly utilized in power management and switching applications within the industrial and consumer electronics sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 730mOhm @ 720mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |
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