IRF7463TRPBF
MOSFET N-CH 30V 14A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7463TRPBF is an N-Channel Power MOSFET designed for efficient switching applications. This device features a 30V drain-source breakdown voltage and supports a continuous drain current of 14A at 25°C ambient. The low on-resistance of 8mOhm at 14A and 10V gate-source voltage ensures minimal conduction losses. With a maximum power dissipation of 2.5W (Ta), it is suitable for thermal management in compact designs. The gate charge is specified at 51nC maximum at 4.5V, and input capacitance (Ciss) is 3150pF maximum at 15V. The MOSFET is housed in an 8-SOIC package with tape and reel packaging for automated assembly. Operating temperature range is from -55°C to 150°C. This component finds application in power management systems, automotive electronics, and industrial power control.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3150 pF @ 15 V |
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