IRF7463PBF
MOSFET N-CH 30V 14A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' HEXFET® IRF7463PBF is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 14A at 25°C. The low on-resistance is specified as a maximum of 8mOhm at 14A and 10V gate-source voltage. Key characteristics include a maximum power dissipation of 2.5W (Ta) and a gate charge (Qg) of 51 nC at 4.5V. Input capacitance (Ciss) is 3150 pF at 15V. The device is housed in an 8-SOIC package (0.154", 3.90mm Width) for surface mounting. Operating temperature ranges from -55°C to 150°C. This MOSFET is suitable for power management, automotive, and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3150 pF @ 15 V |