IRF7460TRPBF
MOSFET N-CH 20V 12A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF7460TRPBF, is designed for demanding applications requiring efficient power switching. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 12A at 25°C ambient temperature, with a maximum power dissipation of 2.5W. The low on-resistance of 10mOhm is achieved at 12A drain current and 10V gate-source voltage, facilitated by a gate charge of 19 nC at 4.5V. The input capacitance (Ciss) is rated at 2050 pF maximum at 10V. Operating across a temperature range of -55°C to 150°C, this MOSFET is housed in an 8-SOIC package, supplied on tape and reel. Its characteristics make it suitable for use in automotive, industrial automation, and consumer electronics power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 10 V |