IRF7460
MOSFET N-CH 20V 12A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7460 is a high-performance N-Channel Power MOSFET designed for efficient power switching applications. This component features a 20V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C, with a maximum power dissipation of 2.5W. The Rds(On) is remarkably low at 10mOhm, achieved at 12A and 10V Vgs, ensuring minimal conduction losses. It operates with a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 3V at 250µA. Key parameters include a gate charge (Qg) of 19 nC at 4.5V and an input capacitance (Ciss) of 2050 pF at 10V. The IRF7460 is housed in an 8-SOIC package, suitable for surface mounting, and is rated for operation across a wide temperature range of -55°C to 150°C. This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 10 V |
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