IRF7459TRPBF
MOSFET N-CH 20V 12A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7459TRPBF is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 12A at 25°C ambient. The IRF7459TRPBF offers a low on-resistance (Rds On) of 9mOhm at 12A and 10V Vgs, achieved with a gate drive as low as 2.8V. Key electrical characteristics include a gate charge (Qg) of 35 nC at 4.5V and an input capacitance (Ciss) of 2480 pF at 10V. With a maximum power dissipation of 2.5W (Ta) and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for demanding environments. The device is packaged in an 8-SOIC (0.154" width) surface-mount configuration and supplied on tape and reel. Its robust performance makes it a reliable choice for automotive, industrial, and power supply designs.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2480 pF @ 10 V |